text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPB020NE7N3GATMA1

Infineon | IPB020NE7N3GATMA1

Manufacturer Part #

IPB020NE7N3GATMA1

Single N-Channel 75 V 2 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Infineon IPB020NE7N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 155nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,710.00
USD
Quantity
Unit Price
1,000
$2.71
2,000
$2.69
3,000+
$2.67
Product Variant Information section