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Manufacturer Part #
IPB029N06NF2SATMA1
StrongIRFET 2 Series 60V 120A 2.9mΩ N‑Channel 150W Power Mosfet TO‑263‑3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:800 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount |
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| Date Code: | 2531 | ||||||||||
Infineon IPB029N06NF2SATMA1 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Part Status:
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Infineon IPB029N06NF2SATMA1 - Technical Attributes
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 2.9mΩ |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 68nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 120A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 31ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.1V |
| Input Capacitance: | 4600pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount