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Infineon | IPB038N12N3GATMA1

Manufacturer Part #

IPB038N12N3GATMA1

Single N-Channel 120 V 3.8 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB038N12N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 3.8mΩ
Rated Power Dissipation: 300|W
Qg Gate Charge: 158nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,140.00
USD
Quantity
Unit Price
1,000
$2.14
2,000
$2.13
3,000
$2.12
4,000+
$2.10
Product Variant Information section