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Manufacturer Part #
IPB038N12N3GATMA1
Single N-Channel 120 V 3.8 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
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Infineon IPB038N12N3GATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPB038N12N3GATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipb038n12n3gatma1-infineon-3060199
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPB038N12N3GATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/ipb038n12n3gatma1-infineon-3060199
Infineon IPB038N12N3GATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 120V |
| Drain-Source On Resistance-Max: | 3.8mΩ |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 158nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount