Référence fabricant
IPB081N06L3GATMA1
IPB081N06L3G Series 60 V 50 A 8.4 mOhm Single N-Channel MOSFET - TO-263-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1000 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount | ||||||||||
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Infineon IPB081N06L3GATMA1 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject Extension of shelf lifetime from 3 to 5 years for products in SMD (Surface Mount Devices) and Leadless packagesReason Extension of shelf lifetime and product availabilityDescription Maximum storage timeOld - 3 years New- 5 yearsIntended start of delivery Immediately
Description of Change:Capacity extension of assembly and final test location to Infineon Technologies Tijuana, Mexico for dedicated products in TO263 package.Reason for Change:Extension of assembly and final test sites for additional capacity to ensure the continuity of supply and flexible manufacturing.
Statut du produit:
Infineon IPB081N06L3GATMA1 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 8.1mΩ |
| Rated Power Dissipation: | 79W |
| Qg Gate Charge: | 29nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 50A |
| Rise Time: | 26ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 1.2V |
| Input Capacitance: | 4900pF |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
1000 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount