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Manufacturer Part #

IPB081N06L3GATMA1

IPB081N06L3G Series 60 V 50 A 8.4 mOhm Single N-Channel MOSFET - TO-263-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2509
Product Specification Section
Infineon IPB081N06L3GATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 8.1mΩ
Rated Power Dissipation: 79W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Rise Time: 26ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.2V
Input Capacitance: 4900pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2000
Multiple Of:
1000
Total
$1,230.00
USD
Quantity
Unit Price
1,000
$0.62
2,000
$0.615
4,000
$0.605
15,000+
$0.59
Product Variant Information section