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Manufacturer Part #

IPB180N06S4H1ATMA2

N-Channel 60 V 1.7 mOhm 270 nC SMT OptiMOS™ Power-Transistor - PG-TO263-7-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 1.7mΩ
Rated Power Dissipation: 250W
Qg Gate Charge: 208nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 60ns
Rise Time: 5ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 16840pF
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,720.00
USD
Quantity
Web Price
1,000+
$3.72
Product Variant Information section