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Manufacturer Part #

IPB60R160C6ATMA1

Single N-Channel 600 V 160 mOhm 75 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB60R160C6ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 160mΩ
Rated Power Dissipation: 176W
Qg Gate Charge: 75nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23.8A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 96ns
Rise Time: 13ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1660pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
1000
Total
$11,340.00
USD
Quantity
Web Price
1,000+
$11.34
Product Variant Information section