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Infineon | IPB64N25S320ATMA1

Manufacturer Part #

IPB64N25S320ATMA1

IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG‐TO-263‐3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2508
Product Specification Section
Infineon IPB64N25S320ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 67nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 64A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 45ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 5240pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$3,500.00
USD
Quantity
Unit Price
1,000
$3.50
2,000+
$3.45
Product Variant Information section