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Infineon | IPB65R190CFDAATMA1

Manufacturer Part #

IPB65R190CFDAATMA1

Single N-Channel 650V 190 mOhm 68 nC CoolMOS™ Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB65R190CFDAATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 151|W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17.5A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 53.2ns
Rise Time: 8.4ns
Fall Time: 6.4ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Height - Max: 4.57mm
Length: 10.31mm
Input Capacitance: 1850pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,780.00
USD
Quantity
Unit Price
1,000
$1.78
2,000
$1.77
3,000
$1.76
5,000+
$1.74
Product Variant Information section