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Infineon | IPD079N06L3GATMA1

Manufacturer Part #

IPD079N06L3GATMA1

IPD079N Series N-Channel 60 V 50A 79W Surface Mount MOSFET TO252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD079N06L3GATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.9mΩ
Rated Power Dissipation: 79W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 37ns
Rise Time: 26ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 3700pF
Series: OptiMOS 3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,112.50
USD
Quantity
Unit Price
2,500
$0.445
5,000
$0.44
7,500
$0.435
10,000
$0.43
12,500+
$0.425
Product Variant Information section