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Infineon | IPD135N03LGATMA1

Manufacturer Part #

IPD135N03LGATMA1

Single N-Channel 30 V 13.5 mOhm 6.4 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2524
Product Specification Section
Infineon IPD135N03LGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 13.5mΩ
Rated Power Dissipation: 31W
Qg Gate Charge: 6.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 3ns
Turn-off Delay Time: 12ns
Rise Time: 3ns
Fall Time: 2.2ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.2V
Technology: Si
Height - Max: 2.41mm
Length: 6.73mm
Input Capacitance: 770pF
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$512.50
USD
Quantity
Unit Price
2,500
$0.205
5,000
$0.20
10,000
$0.199
12,500
$0.198
37,500+
$0.193
Product Variant Information section