text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPD50R280CEAUMA1

Infineon | IPD50R280CEAUMA1

Manufacturer Part #

IPD50R280CEAUMA1

Single N-Channel 500 V 280 mOhm 32.6 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2323
Product Specification Section
Infineon IPD50R280CEAUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.28Ω
Rated Power Dissipation: 119W
Qg Gate Charge: 32.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18.1A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 40ns
Rise Time: 6.4ns
Fall Time: 7.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 773pF
Series: CoolMOS CE
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,162.50
USD
Quantity
Unit Price
2,500
$0.465
5,000
$0.46
10,000
$0.455
12,500+
$0.45
Product Variant Information section