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Infineon | IPD65R400CEAUMA1

Manufacturer Part #

IPD65R400CEAUMA1

Single N-Channel 650 V 400 mOhm 39 nC CoolMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
Infineon IPD65R400CEAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 118W
Qg Gate Charge: 39nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 15.1A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 57ns
Rise Time: 7ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 710pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,087.50
USD
Quantity
Unit Price
2,500
$0.435
5,000
$0.43
7,500
$0.425
12,500+
$0.415
Product Variant Information section