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Manufacturer Part #

IPD90N04S405ATMA1

Single N-Channel 40 V 5 mOhm 37 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2420
Product Specification Section
Infineon IPD90N04S405ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 5.2mΩ
Rated Power Dissipation: 65W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 86A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 7ns
Rise Time: 11ns
Fall Time: 10ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 2280pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
2,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,037.50
USD
Quantity
Unit Price
2,500
$0.415
5,000
$0.41
10,000
$0.405
12,500+
$0.40
Product Variant Information section