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Infineon | IPD90N10S4L06ATMA1

Manufacturer Part #

IPD90N10S4L06ATMA1

IPD90N10S4L Series 100 V 6.6 mOhm 90 A OptiMOSTM-T2 Power-Transistor-TO252-3-313

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
Infineon IPD90N10S4L06ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 6.6mΩ
Rated Power Dissipation: 136W
Qg Gate Charge: 75nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 90A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 6ns
Fall Time: 40ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 4804pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,400.00
USD
Quantity
Unit Price
2,500
$0.96
5,000
$0.945
7,500+
$0.935
Product Variant Information section