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  6. IPDD60R125G7XTMA1

Infineon | IPDD60R125G7XTMA1

Manufacturer Part #

IPDD60R125G7XTMA1

N-Channel 600 V 125 mOhm 27 nC CoolMOS™ G7 Power Transistor - HDSOP-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPDD60R125G7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 120W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 60ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 1080pF
Package Style:  HDSOP-10
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1700
Multiple Of:
1700
Total
$3,128.00
USD
Quantity
Unit Price
1,700
$1.84
3,400+
$1.82
Product Variant Information section