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Manufacturer Part #

IPDQ60R022S7XTMA1

IPDQ60R Series N Channel 600 V 24 A 416 W 22 mOhm CoolMOS Mosfet - PG-HDSOP-22

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPDQ60R022S7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 416W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 24A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 150ns
Rise Time: 4ns
Fall Time: 9ns
Operating Temp Range: -55°C to +155°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 5639pF
Series: CoolMOS
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
750
Multiple Of:
750
Total
$9,540.00
USD
Quantity
Web Price
750+
$12.72
Product Variant Information section