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Infineon | IPG20N10S4L22AATMA1

Manufacturer Part #

IPG20N10S4L22AATMA1

IPG20N10S4L Series 100 V 22 mOhm 20 A OptiMOS™-T2 Power-Transistor-PG-TDSON-8-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPG20N10S4L22AATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 60W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 20A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 30ns
Rise Time: 3ns
Fall Time: 18ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 1350pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,825.00
USD
Quantity
Unit Price
5,000+
$0.765
Product Variant Information section