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Infineon | IPN60R3K4CEATMA1

Manufacturer Part #

IPN60R3K4CEATMA1

Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN60R3K4CEATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 3.4Ω
Rated Power Dissipation: 5W
Qg Gate Charge: 4.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.6A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 40ns
Rise Time: 10ns
Fall Time: 60ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 93pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$339.00
USD
Quantity
Unit Price
3,000
$0.113
9,000
$0.111
15,000
$0.11
30,000
$0.109
60,000+
$0.107
Product Variant Information section