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Manufacturer Part #

IPP60R099C6XKSA1

Single N-Channel 600 V 99 mOhm 119 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2044
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 278W
Qg Gate Charge: 119nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 37.9A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 75ns
Rise Time: 12ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 2660pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
500
Multiple Of:
50
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Total
$2,175.00
USD
Quantity
Web Price
50+
$4.35
Product Variant Information section