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Manufacturer Part #

IPS70R1K4P7SAKMA1

Single N-Channel 700 V 1.4 Ohm 4.7 nC CoolMOS™ Power Mosfet - TO-251

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPS70R1K4P7SAKMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 700V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 22.7W
Qg Gate Charge: 4.7nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 4A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 63ns
Rise Time: 4.9ns
Fall Time: 61ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 158pF
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1500
Multiple Of:
75
Total
$258.00
USD
Quantity
Unit Price
75
$0.172
4,500
$0.169
7,500
$0.168
22,500
$0.165
37,500+
$0.162
Product Variant Information section