text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPT015N10N5ATMA1

Infineon | IPT015N10N5ATMA1

Manufacturer Part #

IPT015N10N5ATMA1

Single N-Channel 100 V 1.5 mOhm 211 nC OptiMOS™ Power Mosfet - HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2249
Product Specification Section
Infineon IPT015N10N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 169nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 300A
Turn-on Delay Time: 36ns
Turn-off Delay Time: 85ns
Rise Time: 30ns
Fall Time: 30ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 12nF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:Order inventroy details
2,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$4,500.00
USD
Quantity
Unit Price
2,000+
$2.25
Product Variant Information section