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Infineon | IPT60R125G7XTMA1

Manufacturer Part #

IPT60R125G7XTMA1

MOSFET, 650V, 20A, 1250MOHM, N-CHANNEL, 8-PowerSFN

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPT60R125G7XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 125mΩ
Rated Power Dissipation: 120W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 60ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 1080pF
Series: CoolMOS SJ
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$3,480.00
USD
Quantity
Unit Price
2,000
$1.74
4,000+
$1.72
Product Variant Information section