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Manufacturer Part #

IPW60R099C7XKSA1

Single N-Channel 600 V 99 mOhm 42 nC CoolMOS™ Power Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPW60R099C7XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 99mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 42nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 22A
Turn-on Delay Time: 11.8ns
Turn-off Delay Time: 54ns
Rise Time: 8ns
Fall Time: 4.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Height - Max: 21.1mm
Length: 16.13mm
Input Capacitance: 1819pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$624.00
USD
Quantity
Unit Price
30
$2.60
480
$2.58
960
$2.56
3,600+
$2.52
Product Variant Information section