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Infineon | IPW65R048CFDAFKSA1

Manufacturer Part #

IPW65R048CFDAFKSA1

MOSFET N-Ch 650V 63.3A  TO247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPW65R048CFDAFKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 48mΩ
Rated Power Dissipation: 500W
Qg Gate Charge: 270nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 63.3A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 85ns
Rise Time: 10ns
Fall Time: 4ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 7440pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$1,375.20
USD
Quantity
Unit Price
4
$5.87
20
$5.81
75
$5.76
200
$5.73
750+
$5.64
Product Variant Information section