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Manufacturer Part #

IQD016N08NM5CGSCATMA1

N-Channel 80 V 323 A 333 W 1.57mOhm Surface Mount Mosfet - PG-WHTFN-9-U02

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IQD016N08NM5CGSCATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.57mΩ
Rated Power Dissipation: 333W
Qg Gate Charge: 106nC
Gate-Source Voltage-Max [Vgss]: ±20V
Drain Current: 323A
Turn-on Delay Time: 15s
Turn-off Delay Time: 29s
Rise Time: 7s
Fall Time: 10s
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.8V
Technology: Si
Input Capacitance: 9200pF
Series: OptiMOS™ 5
Package Style:  PG-WHTFN-9
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
5000
Multiple Of:
5000
Total
$12,800.00
USD
Quantity
Unit Price
5,000+
$2.56