Infineon — Expanded OptiMOS™ and StrongIRFET™ Power MOSFETs

Infineon OptiMOS™ and StrongIRFET™ Power MOSFETs

New technology enables innovation and performance

Infineon’s OptiMOS™ and StrongIRFET™ power MOSFETs address a broad range of applications, from low to high switching frequencies such as switch mode power supplies (SMPS), battery powered applications, motor control, drives, inverters, and computing.

OptiMOS™ power MOSFETs provide excellent best-in-class performance. Features include ultra low R_DS(on) as well as high efficiency and power density ideal for high switching frequency applications. New 25 V-150 V OptiMOS™ power MOSFETs in PQFN 3.3x3.3 mm² and 5x6 mm² Source-Down packages are now available in a BSC (bottom-side cooling) and a DSC (dual-side cooling) variant, with two different footprints - a Corner-Gate- and a Center-Gate version - with the latter optimized explicitly for parallelization.

The Source-Down package enables the lowest R_DS(on) per footprint area and outstanding thermal performance, giving significant potential for improvements on a system level, like BOM-cost reduction, easy thermal management with less active cooling required, improvement of power density, and efficiency.

StrongIRFET™ power MOSFETs are designed for rugged industrial applications and are ideal for designs with a low switching frequency as well as those that require a high current carrying capability. The new StrongIRFET™ 2 power MOSFET portfolio is available in 30V, 40V, 80V and 100V and a variety of packages starting with TO-220 and continuing with TO-220 FullPAK, D²PAK, D²PAK 7-pin, DPAK, PQFN 3x3 and SuperSO8 (PQFN 5x6). The new technology of the StrongIRFET™ 2 portfolio offers up to 40 percent R DS(on) improvement and up to 60 percent lower FOMQ g compared to the previous StrongIRFET™ devices, translating into higher power efficiency for improved overall system performance while having an excellent robustness. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

OptiMOS™

StrongIRFET 2™