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Infineon | IQE013N04LM6ATMA1

Manufacturer Part #

IQE013N04LM6ATMA1

N-Channel 40 V 205 A 1.35 mOhm Surface Mount OptiMOSTM Power-MOSFET - TSON-8-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IQE013N04LM6ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.35mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 7.1ns
Turn-off Delay Time: 21ns
Rise Time: 3.6ns
Fall Time: 4.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 3900pF
Package Style:  PG-TSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$4,900.00
USD
Quantity
Unit Price
5,000+
$0.98
Product Variant Information section