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Manufacturer Part #

IQE022N06LM5CGATMA1

N-Channel 60 V 151 A 100 W 2.2 mOhm Surface Mount Mosfet - PG-TTFN-9-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2322
Product Specification Section
Infineon IQE022N06LM5CGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 2.2mΩ
Rated Power Dissipation: 100W
Qg Gate Charge: 53nC
Gate-Source Voltage-Max [Vgss]: ±20V
Drain Current: 151A
Turn-on Delay Time: 6.1ns
Turn-off Delay Time: 26ns
Rise Time: 4.1ns
Fall Time: 5.9ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.3V
Technology: Si
Input Capacitance: 4420pF
Series: OptiMOS™ 5
Package Style:  PG-TTFN-9
Mounting Method: Surface Mount
Pricing Section
Global Stock:
200
USA:
200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$2.31
USD
Quantity
Unit Price
1
$2.31
20
$2.10
100
$1.99
500
$1.88
2,500+
$1.77