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Manufacturer Part #
IQE022N06LM5CGATMA1
N-Channel 60 V 151 A 100 W 2.2 mOhm Surface Mount Mosfet - PG-TTFN-9-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:5000 per Package Style:PG-TTFN-9 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2322 | ||||||||||
Product Specification Section
Infineon IQE022N06LM5CGATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
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Infineon IQE022N06LM5CGATMA1 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 2.2mΩ |
| Rated Power Dissipation: | 100W |
| Qg Gate Charge: | 53nC |
| Gate-Source Voltage-Max [Vgss]: | ±20V |
| Drain Current: | 151A |
| Turn-on Delay Time: | 6.1ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 4.1ns |
| Fall Time: | 5.9ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.3V |
| Technology: | Si |
| Input Capacitance: | 4420pF |
| Series: | OptiMOS™ 5 |
| Package Style: | PG-TTFN-9 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
200
USA:
200
Product Variant Information section
Available Packaging
Package Qty:
5000 per
Package Style:
PG-TTFN-9
Mounting Method:
Surface Mount