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Manufacturer Part #
IRF3205PBF
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
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Infineon IRF3205PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF3205PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/irf3205pbf-infineon-9856600
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF3205PBF&field4=Infineon&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/irf3205pbf-infineon-9856600
Infineon IRF3205PBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 8mΩ |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 146nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 110A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 101ns |
| Fall Time: | 65ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 3247pF |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier. The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free. For more information, please see the datasheet above.
The IRF3205PBF comes in a TO-220 package, and is lead free as indicated by the PBF.
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)