Manufacturer Part #
Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3
|Standard Pkg:|| |
Product Variant Information section
Infineon IRF3205PBF - Product Specification
Description:Change of wafer production location from Infineon Technologies Temecula, USA to Sichuan Gen Microelectronics co.LTD, China for several Gen5 and Gen 7 MOSFET Reason: The wafer production of the affected products will be transferred to Sichuan Gen Microelectronics co.LTD according to global Infineon production strategy.
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Infineon IRF3205PBF - Technical Attributes
|No of Channels:||1|
|Drain-to-Source Voltage [Vdss]:||55V|
|Drain-Source On Resistance-Max:||8mΩ|
|Rated Power Dissipation:||200W|
|Qg Gate Charge:||146nC|
|Gate-Source Voltage-Max [Vgss]:||20V|
|Turn-on Delay Time:||14ns|
|Turn-off Delay Time:||50ns|
|Operating Temp Range:||-55°C to +175°C|
|Gate Source Threshold:||4V|
|Technology:||Advanced Process Technology|
|Height - Max:||4.83mm|
|Package Style:||TO-220-3 (TO-220AB)|
Features & Applications
The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier. The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free. For more information, please see the datasheet above.
The IRF3205PBF comes in a TO-220 package, and is lead free as indicated by the PBF.