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Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
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Référence fabricant
IRF3205PBF
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50 par Tube
TO-220-3 (TO-220AB)
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Subject:Barcode Product Label (BPL) Harmonization at Tijuana, MexicoReason: Standardization of BPL for OneSAP devices at Tijuana, Mexico
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Statut du produit:
The IRF3205PBF is an Advanced HEXFET® Power MOSFET from International Rectifier. The HEXFET® utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Features include Advanced Process Technology, Ultra Low On-Resistance, Dynamic dv/dt Rating, 175°C Operating Temperature, Fast Switching, Fully Avalanche Rated, and Lead-Free. For more information, please see the datasheet above.
Stock conservé dans l'entrepôt du fabricant. Sous réserve de disponibilité et de temps de transit.