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Manufacturer Part #

IRF3808PBF

Single N-Channel 75 V 7 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRF3808PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 7mΩ
Rated Power Dissipation: 330W
Qg Gate Charge: 220nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 140A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 68ns
Rise Time: 140ns
Fall Time: 120ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Planar Technology
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 5310pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,260.00
USD
Quantity
Unit Price
50
$1.29
200
$1.28
750
$1.26
2,000
$1.25
5,000+
$1.23