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Manufacturer Part #
IRF540STRRPBF
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Std. Mfr. Pkg Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay IRF540STRRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF540STRRPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf540strrpbf-vishay-C008042127
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF540STRRPBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf540strrpbf-vishay-C008042127
Vishay IRF540STRRPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.077Ω |
| Rated Power Dissipation: | 3.7W |
| Qg Gate Charge: | 72nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 28A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 53ns |
| Rise Time: | 44ns |
| Fall Time: | 43ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 10.67mm |
| Input Capacitance: | 1700pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
800 per Std. Mfr. Pkg
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount