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Manufacturer Part #
IRF630NPBF
Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
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Infineon IRF630NPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Subject: Introduction of an additional wafer production at Infineon Technologies Kulim, Malaysia and change of wafer diameter from 150mm to 200mm for several G5.5 MOSFETReason: The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy.
Part Status:
Infineon IRF630NPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.3Ω |
| Rated Power Dissipation: | 82W |
| Qg Gate Charge: | 35nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.3A |
| Turn-on Delay Time: | 7.9ns |
| Turn-off Delay Time: | 27ns |
| Rise Time: | 14ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 575pF |
| Package Style: | TO-220-3 (TO-220AB) |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)