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Manufacturer Part #
IRF640NPBF
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) | ||||||||||
| Date Code: | 2352 | ||||||||||
Product Specification Section
Infineon IRF640NPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Active
Active
Infineon IRF640NPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.15Ω |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 67nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 18A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 23ns |
| Rise Time: | 19ns |
| Fall Time: | 5.5ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 1160pF |
| Package Style: | TO-220-3 (TO-220AB) |
Features & Applications
Pricing Section
Global Stock:
53,912
USA:
53,912
Factory Lead Time:
18 Weeks
Quantity
Unit Price
1
$0.395
100
$0.385
300
$0.38
1,250
$0.37
4,000+
$0.35
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)