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Infineon | IRF6717MTRPBF

Manufacturer Part #

IRF6717MTRPBF

Single N-Channel 25 V 1.25 mOhm 69 nC SMT HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF6717MTRPBF - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.25mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 46nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 38A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 19ns
Rise Time: 37ns
Fall Time: 15ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 6750pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$6,768.00
USD
Quantity
Unit Price
4,800+
$1.41
Product Variant Information section