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Manufacturer Part #
IRF730APBF
Single N-Channel 400 V 1 Ohm Flange Mount Power MosFet - TO-220AB
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
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Vishay IRF730APBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF730APBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf730apbf-vishay-2424372
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF730APBF&field4=Vishay&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irf730apbf-vishay-2424372
Vishay IRF730APBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 74|W |
| Qg Gate Charge: | 22nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount