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Infineon | IRF7341GTRPBF

Manufacturer Part #

IRF7341GTRPBF

55 V 5.1 A 780 pF Surface Mount Dual N-Channel HEXFET® Power MOSFET - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7341GTRPBF - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 2.4W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.1A
Turn-on Delay Time: 9.2ns
Turn-off Delay Time: 31ns
Rise Time: 7.7ns
Fall Time: 12.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1V
Input Capacitance: 780pF
Series: HEXFET
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$6,200.00
USD
Quantity
Unit Price
4,000+
$1.55
Product Variant Information section