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Manufacturer Part #
IRF7342TRPBF
Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2439 | ||||||||||
Infineon IRF7342TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRF7342TRPBF - Technical Attributes
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | -55V |
| Drain-Source On Resistance-Max: | 0.17Ω |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 38nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -3.4A |
| Turn-on Delay Time: | 22ns |
| Turn-off Delay Time: | 64ns |
| Rise Time: | 15ns |
| Fall Time: | 32ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -1V |
| Technology: | Generation V |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 690pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount