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Référence fabricant
IRF7342TRPBF
Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :4000 par Reel Style d'emballage :SOIC-8 Méthode de montage :Surface Mount |
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Infineon IRF7342TRPBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7342TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7342trpbf-infineon-5069463
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https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRF7342TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irf7342trpbf-infineon-5069463
Infineon IRF7342TRPBF - Caractéristiques techniques
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | -55V |
| Drain-Source On Resistance-Max: | 0.17Ω |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 38nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -3.4A |
| Turn-on Delay Time: | 22ns |
| Turn-off Delay Time: | 64ns |
| Rise Time: | 15ns |
| Fall Time: | 32ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -1V |
| Technology: | Generation V |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 690pF |
| Style d'emballage : | SOIC-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
SOIC-8
Méthode de montage :
Surface Mount