Référence fabricant
IRF740ASTRRPBF
IRF740AS Series N-Channel 400 V 550 mOhm Surface Mount Power Mosfet - TO-263
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: |
Product Variant Information section
Emballages disponiblesQté d'emballage(s) :800 par Reel Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Surface Mount |
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Vishay IRF740ASTRRPBF - Spécifications du produit
Informations de livraison:
Code HTS:
ECCN:
Informations PCN:
Description of Change: Vishay Siliconix announces the capacity transfer to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelTime Schedule: Start Shipment Date: Thursday January 15, 2026
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Statut du produit:
Vishay IRF740ASTRRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 400V |
| Drain-Source On Resistance-Max: | 550mΩ |
| Rated Power Dissipation: | 3.1|W |
| Qg Gate Charge: | 36nC |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
800 par Reel
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Surface Mount