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Manufacturer Part #

IRF7490TRPBF

Single N-Channel 100V 39 mOhm 56 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2542
Product Specification Section
Infineon IRF7490TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 56nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.4A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 51ns
Rise Time: 4.2ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.5mm
Length: 5mm
Input Capacitance: 1720pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
8,000
USA:
8,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
4000
Multiple Of:
4000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,420.00
USD
Quantity
Unit Price
4,000
$0.355
12,000
$0.35
20,000+
$0.345
Product Variant Information section