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Infineon | IRFB3607PBF

Manufacturer Part #

IRFB3607PBF

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFB3607PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 9mΩ
Rated Power Dissipation: 140W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 43ns
Rise Time: 110ns
Fall Time: 96ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 3070pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,030.00
USD
Quantity
Unit Price
50
$0.545
250
$0.53
1,250
$0.515
2,500
$0.51
7,500+
$0.49
Product Variant Information section