IRFB4227PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB4227PBF

Manufacturer Part #

IRFB4227PBF

Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2444
Product Specification Section
Infineon IRFB4227PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 330W
Qg Gate Charge: 70nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 65A
Turn-on Delay Time: 33ns
Turn-off Delay Time: 21ns
Rise Time: 20ns
Fall Time: 31ns
Operating Temp Range: -40°C to +175°C
Gate Source Threshold: 5V
Technology: Advanced Process Technology
Input Capacitance: 4600pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$670.00
USD
Quantity
Unit Price
1
$0.72
50
$0.70
200
$0.68
500
$0.67
2,000+
$0.635
Product Variant Information section