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Référence fabricant

IRFB4620PBF

Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
Infineon IRFB4620PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 72.5mΩ
Rated Power Dissipation: 144W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 25A
Turn-on Delay Time: 13.4ns
Turn-off Delay Time: 25.4ns
Rise Time: 22.4ns
Fall Time: 14.8ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 1710pF
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Through Hole
Fonctionnalités et applications

The IRFB4620PBF is a  144W,  200V HEXFET® power MOSFETs with ultra low gate charge (Qg) for industrial applications including Switch Mode Power Supplies (SMPS), uninterruptable power supplies (UPS), inverters and DC motor drives.

IR’s new 200V MOSFETs feature up to 33 percent lower total gate charge than competing devices.

These devices are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC applications.

The new MOSFETs are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, and are offered lead free and are RoHS compliant.

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
8 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
965,00 $
USD
Quantité
Prix unitaire
50
$1.02
200
$0.99
750
$0.965
2 000
$0.945
5 000+
$0.915
Product Variant Information section