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Manufacturer Part #
IRFB4620PBF
Single N-Channel 200 V 72.5 mOhm 38 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
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Infineon IRFB4620PBF - Product Specification
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Infineon IRFB4620PBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 72.5mΩ |
| Rated Power Dissipation: | 144W |
| Qg Gate Charge: | 38nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 25A |
| Turn-on Delay Time: | 13.4ns |
| Turn-off Delay Time: | 25.4ns |
| Rise Time: | 22.4ns |
| Fall Time: | 14.8ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 9.02mm |
| Length: | 10.67mm |
| Input Capacitance: | 1710pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
The IRFB4620PBF is a 144W, 200V HEXFET® power MOSFETs with ultra low gate charge (Qg) for industrial applications including Switch Mode Power Supplies (SMPS), uninterruptable power supplies (UPS), inverters and DC motor drives.
IR’s new 200V MOSFETs feature up to 33 percent lower total gate charge than competing devices.
These devices are optimized for fast switching circuits where switching losses are critical, and, therefore, are well suited as a primary switch for isolated DC-DC converters for telecom applications or driving light load efficiency in any advanced DC-DC applications.
The new MOSFETs are qualified to industrial grade and are moisture sensitivity level 1 (MSL1). The devices are available in TO220, and are offered lead free and are RoHS compliant.
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole