Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IRFH5302TRPBF
Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available Packaging
Package Qty:4000 per Reel Package Style:PQFN 5 x 6 mm Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2314 | ||||||||||
Infineon IRFH5302TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFH5302TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfh5302trpbf-infineon-4499372
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRFH5302TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfh5302trpbf-infineon-4499372
Infineon IRFH5302TRPBF - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 3.5mΩ |
| Rated Power Dissipation: | 3.6W |
| Qg Gate Charge: | 76nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 32A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 22ns |
| Rise Time: | 51ns |
| Fall Time: | 18ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.35V |
| Technology: | Si |
| Height - Max: | 0.9mm |
| Length: | 6mm |
| Input Capacitance: | 4400pF |
| Package Style: | PQFN 5 x 6 mm |
| Mounting Method: | Surface Mount |
Features & Applications
International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5302TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).
The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5302TRPbF 30V device delivers industry leading RDS(on) of only 2.1mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
The 30V IRFH5302TRPbF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5302TRPbF features ultra low RDS(on) of 2.1mOhm (max.) combined with just 29nC gate charge (Qg).
In addition to achieving excellent thermal performance, as a result of using the IRFH5302TRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
The IRFH5302TRPBF is a 30V,100a, 2.1mohms, PQFN package mosfet.
Available Packaging
- Reel Qty: 4,000+ / Unit Price: $0.385 / Stock: 0 Qty: 4,000+$0.385 Stock: 0
- Reel Qty: 4,000+ / Unit Price: $0.385 / Stock: 0 Qty: 4,000+$0.385 Stock: 0
- ReelSelected Variant Qty: 4,000+ / Unit Price: $0.385 / Stock: 160,000 Qty: 4,000+$0.385 Stock: 160,000
- Reel Qty: 4,000+ / Unit Price: $0.385 / Stock: 0 Qty: 4,000+$0.385 Stock: 0
Package Qty:
4000 per Reel
Package Style:
PQFN 5 x 6 mm
Mounting Method:
Surface Mount