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Référence fabricant
IRFH5302TRPBF
Single N-Channel 30 V 3.5 mOhm 76 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponibles
Qté d'emballage(s) :4000 par Reel Style d'emballage :PQFN 5 x 6 mm Méthode de montage :Surface Mount | ||||||||||
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Infineon IRFH5302TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject:Change of passivation at Infineon Technologies Kulim, Malaysia, for dedicated TISON, TDSON, TSDSON and IQFN productsDescription OldDie passivation - Epoxy resin material ANew:- Epoxy resin material BReason:Ensuring continuity of supply due to end of life of material from supplierIntended start of delivery 2025-08-01
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5302TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfh5302trpbf-infineon-3175900
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFH5302TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfh5302trpbf-infineon-3175900
Infineon IRFH5302TRPBF - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 3.5mΩ |
| Rated Power Dissipation: | 3.6W |
| Qg Gate Charge: | 76nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 32A |
| Turn-on Delay Time: | 18ns |
| Turn-off Delay Time: | 22ns |
| Rise Time: | 51ns |
| Fall Time: | 18ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.35V |
| Technology: | Si |
| Height - Max: | 0.9mm |
| Length: | 6mm |
| Input Capacitance: | 4400pF |
| Style d'emballage : | PQFN 5 x 6 mm |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
International Rectifier, a world leader in power management technology, today introduced a family of HEXFET power MOSFETs including the IRFH5302TRPbF that delivers the industry’s lowest on-state resistance (RDS(on)).
The new power MOSFETs featuring IR’s latest silicon technology are the company’s first devices available in a 5x6mm PQFN package with optimized copper clip and solder die. The IRFH5302TRPbF 30V device delivers industry leading RDS(on) of only 2.1mOhm (max.) at 4.5V Vgs to significantly cut conduction losses for DC motor drive applications such as hand tools.
The 30V IRFH5302TRPbF is designed for DC switch applications such as active ORing and DC motor drive applications requiring high current carrying capability and high efficiency. The IRFH5302TRPbF features ultra low RDS(on) of 2.1mOhm (max.) combined with just 29nC gate charge (Qg).
In addition to achieving excellent thermal performance, as a result of using the IRFH5302TRPbF, board space and cost are reduced compared to existing solutions as fewer parts are required for a given power loss.
The IRFH5302TRPBF is a 30V,100a, 2.1mohms, PQFN package mosfet.
Emballages disponibles
- Reel Qté: 4 000+ / Prix unitaire: $0.385 / Stock: 0 Qté: 4 000+$0.385 Stock: 0
- Reel Qté: 4 000+ / Prix unitaire: $0.385 / Stock: 0 Qté: 4 000+$0.385 Stock: 0
- Reel Qté: 4 000+ / Prix unitaire: $0.385 / Stock: 160 000 Qté: 4 000+$0.385 Stock: 160 000
- ReelSelected Variant Qté: 4 000+ / Prix unitaire: $0.385 / Stock: 0 Qté: 4 000+$0.385 Stock: 0
Qté d'emballage(s) :
4000 par Reel
Style d'emballage :
PQFN 5 x 6 mm
Méthode de montage :
Surface Mount