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Manufacturer Part #

IRFR3410TRPBF

Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2143
Product Specification Section
Infineon IRFR3410TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 3W
Qg Gate Charge: 56nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 40ns
Rise Time: 27ns
Fall Time: 13ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 1690pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
486,000
USA:
434,000
Germany (Online Only):
52,000
1,666,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
2000
Multiple Of:
2000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,020.00
USD
Quantity
Web Price
2,000
$0.51
4,000
$0.495
6,000
$0.49
8,000
$0.485
10,000+
$0.475