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Infineon | IRFS3107TRLPBF

Manufacturer Part #

IRFS3107TRLPBF

Single N-Channel 75 V 3 mOhm 240 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFS3107TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 3mΩ
Rated Power Dissipation: 370W
Qg Gate Charge: 160nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 230A
Turn-on Delay Time: 110ns
Turn-off Delay Time: 100ns
Rise Time: 220ns
Fall Time: 130ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Input Capacitance: 9370pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,136.00
USD
Quantity
Unit Price
800
$1.42
1,600
$1.41
2,400
$1.40
4,000+
$1.39
Product Variant Information section